Symbol. Description. FGS15N40L. Units. VCES. Collector-Emitter Voltage. 400. V. VGES. Gate-Emitter Voltage. ± 6. V. ICM (1). Pulsed Collector Current.

General Description Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar ...

Fairchild Semiconductor International (South Portland, ME) introduced the FGS15N40L, a powerful 400V trench IGBT housed in an ultra-compact package.

Terminal New Original Electronic Connector FGS15N40L In Stock hot ; Send inquiry. Chat now ; Trade Assurance. Built-in order protection service in alibaba.com.

FGS15N40L September 2001 IGBT FGS15N40L General Description Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance ...

FGS15 Datasheet. Part #: FGS15N40L. Datasheet: 204Kb/6P. Manufacturer: Fairchild Semiconductor. Description: Electrical Characteristics of IGBT. 3 Results.

Hoja de datos de FGS15N40L de onsemi ; September 2001 ; IGBT ; FGS15N40L ; General Description ; Insulated Gate Bipolar Transistors(IGBTs) with trench.

FGS15N40L. Vendor: Fairchild Semiconductor Corporation. Call. Manufacturer No ... FGS15N40L. Number of Terminals. 8. Package Description. SOP-8. Part Life Cycle ...

These devices are well suitable for strobe application Features High Input Impedance High Peak Current Capabi... Fairchild Semiconductor. FGS15N40L. File ...