24-1 Method for. Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Page 4. FGH50N3.
Overview. Using ON Semiconductor's planar technology, this IGBT is ideal for many high voltage switching applications operating at high frequencies where low ...
FGH50N3 Rev. C0. FGH50N3. 300 V SMPS IGBT. Page 4. Typical Performance Curves TJ = 25°C unless otherwise noted. Figure 1. DC Collector Current vs Case.
FGH50N3ONSEMI ; Type of transistor. IGBT ; Collector-emitter voltage. 300V ; Collector current. 75A ; Power dissipation. 463W ; Case. TO247-3.