FDZ202P ; Input Capacitance (Ciss) (Max) @ Vds. 884 pF @ 10 V ; FET Feature. - ; Power Dissipation (Max). 2W (Ta) ; Operating Temperature. -55°C ~ 150°C (TJ).
FDZ202P onsemi / Fairchild MOSFET 20V/12V P-Channel datasheet, inventory, & pricing.
Combining Fairchild's advanced 2.5V specified. PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS(ON).
Part #: FDZ202P. Download. File Size: 35Kbytes. Page: 4 Pages. Description: P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET.
Technical Specifications ; Gate to Source Voltage (Vgs), 12 V ; Input Capacitance, 884 pF ; Max Operating Temperature, 150 °C ; Max Power Dissipation, 2 W ; Min ...
The new ball-grid array (BGA) packaged devices, with footprint dimensions ranging from 2.0mm x 2.0mm to 3.5mm x 4.0mm, offer lower than competitive devices ...
Features. ▫ 90% Peak Efficiency. ▫ Low EMI. ▫ Low Ripple. ▫ Selectable Output Voltage:1.2V/1.5V for FAN5631. ▫ Efficiency Optimizer Feature for FAN5632.
$16.26
FDZ202P 12-BGA MOSFET P-CH 20V 5.5A BGA ; Vgs(th) (Max) @ Id, 1.5V @ 250?A ; Gate Charge (Qg) @ Vgs, 13nC @ 4.5V ; Input Capacitance (Ciss) @ Vds, 884pF @ 10V.
FDZ202P Datasheet. Part #: FDZ202P. Datasheet: 35Kb/4P. Manufacturer: Fairchild Semiconductor. Description: P-Channel 2.5V Specified PowerTrenchTM BGA ...
s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.0099 ohms ; PD: 2000 milliwatts ; Package Type: TO-220, MP-45F, TO ...