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FDS6982 contains two unique 30V, N-channel, logic level, PowerTrenchâ MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction losses (less than 20mΩ at V GS = 4.5V).
FDS6982CT. FDS6982TR. Standard Package. 2,500. Order today, ships today. FDS6982 – Mosfet Array 30V 6.3A, 8.6A 900mW Surface Mount 8-SOIC from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- onsemi
- Obsolete
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FDS6982 A S . www.onsemi.com 4 Typical Characteristics: Q2 0 10 20 30 00.5 1 1.5 2 V DS, DRAIN-SOURCE VOLTAGE (V) I D, DRAIN CURRENT (A) 2.5V 3.0V 4.5V V GS = 10V
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The FDS6982AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two unique 30V, N-channel, logic level, PowerTrench ® MOSFETs designed to maximize power conversion ...
FDS6982 Product details. This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrench™ MOSFETs designed to maximize ...
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FDS6982 con t ains two unique 30 V, N-channel, logic level, Power T renc h ...
FDS6982 contains two unique 30V, N-channel, logic level, PowerTrenchâ MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction losses (less than 20mΩ at V GS = 4.5V).
