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This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Product Overview. Applications. Features. 12.5 A, 30 V. R = 9.5 mΩ @ V = 10 V. R = 13 mΩ @ V = 4.5 V. Ultra-low gate charge. High performance trench technology for extremely low R. High power and current handling capability. Material Composition. Product Change Notification. Product List.
FDS6680A_Q onsemi / Fairchild MOSFET SO-8 SGL N-CH 30V datasheet, inventory, & pricing.
FDS6680A Product details. This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
View FDS6680A by onsemi datasheet for technical specifications, dimensions and more at DigiKey.
The FDS6680A is a 30V N-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance.
File Size: 202Kbytes. Page: 5 Pages. Description: Single N-Channel, Logic Level, PowerTrench짰 MOSFET. Manufacturer: Fairchild Semiconductor.
