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FDS4935A www.onsemi.com 4 TYPICAL CHARACTERISTICS (continued) 0 10 20 30 40 50 0.0001 0.01 0.1 1 10 100 CAPACITANCE (pF) 0 2 4 6 8 10 0.01 0.1 1 10 100 Qg, GATE CHARGE (nC) −VDS, DRAIN TO SOURCE VOLTAGE (V)
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2003 Fairchild Semiconductor Corporation FDS4935 Rev B(W) FDS4935 Dual 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
Description. Standard Package. 2,500. Order today, ships today. FDS4935 – Mosfet Array 30V 7A 2W Surface Mount 8-SOIC from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- onsemi
- PowerTrench®
- Tape & Reel (TR)
FDS4935 Datasheet by onsemi. process. It has been optim ized for power m anagement. voltage ratings (4. 5V – 25V). 1. is determ ined by the user's bo ard design. mi ni mu m p a d. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
2003 Fairc hild Semiconduct or Corporation FDS4935 Rev B(W) FDS4935 . Dual 30V P-Channel Po werTrench ...
Overview. This P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V). Waiting. Product Overview.
General Description. This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V).
