UltraFET® devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and ...
Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit. OFF CHARACTERISTICS. BVDSS. Drain to Source Breakdown Voltage. ID = 250 μA, VGS = 0 V.
FDS2572. 330mm. 12mm. 2500units. 4. 3. 2. 1. 5. 6. 7. 8. 查询FDS2572供应商 · 捷多邦,专业PCB打样工厂,24小时加急出货. Page 2. ©2001 Fairchild Semiconductor ...