Drain Current. Continuous (Package Limited). TC = 25°C. -13.5. A. Continuous (Silicon Limited). TC = 25°C. -14. Continuous (Note 1a). TA = 25°C.

Order today, ships today. FDMC5614P – P-Channel 60 V 5.7A (Ta), 13.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3) from onsemi.

Single N-channel MOSFET in a 5mm x 6mm LFPAK package designed for compact and efficient designs. ... Delivers -30V drain-to-source voltage, 2.7mΩ on-resistance at ...

This P-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications requiring a wide ...

FDMC5614P Rev.C2 www.fairchildsemi.com. 1. FDMC5614P. P-Channel PowerTrench. ®. MOSFET. -60V, -13.5A, 100mΩ. Features. ▫ Max rDS(on) = 100mΩ at VGS = -10V ...

Order today, ships today. FDMC5614P – P-Channel 60 V 5.7A (Ta), 13.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3) from onsemi.

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management ...

Notes: 1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while ...

The FDMC5614P MOSFET is a P-channel, surface mount device manufactured by Fairchild/ON Semiconductor. It has a drain-source breakdown voltage of 60V and a ...

2 Pcs Field Effect Transistor (MOSFET) FDMC5614P DFN3x3-8 FDMC5614P ; Returns. Eligible for Return, Refund or Replacement within 30 days of receipt ; Payment.