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FDMC2610 ; Input Capacitance (Ciss) (Max) @ Vds. 960 pF @ 100 V ; FET Feature. - ; Power Dissipation (Max). 2.1W (Ta), 42W (Tc) ; Operating Temperature. -55°C ~ 150 ...
This N-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications. Waiting.
FDMC2610 Rev.C3 www.fairchildsemi.com. 1. FDMC2610. N-Channel UltraFET Trench. ®. MOSFET. 200V, 9.5A, 200mΩ. Features. ▫ Max rDS(on) = 200mΩ at VGS = 10V ...
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Features a 177A continuous drain current, 2.8mΩ at 10V RDS(ON), and 100V drain-to-source voltage.
[PDF] FDMC2610 - MOSFET – N-Channel, UltraFET Trench 200 V, 9.5 A, 200 mΩ
www.onsemi.com › fdmc2610-d
FDMC2610/D. MOSFET – N-Channel,. UltraFET Trench. 200 V, 9.5 A, 200 mW. FDMC2610. General Description. This N−Channel MOSFET is a rugged gate version of onsemi ...
$2,274.48
FDMC2610 ; Continuous Drain Current Id, 9.5 ; Drain Source On State Resistance, 200 ; Drain Source Voltage Vds, 200 ; MSL Level, MSL 1 - Unlimited ; No. of Pins, 8.
SEK 11.39
Buy FDMC2610 - Onsemi - Power MOSFET, N Channel, 200 V, 2.2 A, 0.2 ohm, Power 33, Surface Mount. Farnell Sverige offers fast quotes, same day dispatch, ...
Part #: FDMC2610. Download. File Size: 370Kbytes. Page: 7 Pages. Description: N-Channel UltraFET Trench MOSFET(200V, 9.5A, 200mohm).
FDMC2610ONSEMI ; Drain current. 9.5A ; Power dissipation. 42W ; Case. WDFN8 ; Gate-source voltage. ±20V ; On-state resistance. 397mΩ.
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The FDMC2610 is Trans MOSFET N-CH Si 200V 2.2A 8-Pin WDFN EP T/R, buy FDMC2610 from ON Semiconductor, LLC at Ovaga Technologies. Check FDMC2610 in stock, prices