FEATURED PRODUCTS. ONSEMI ... Single N-channel MOSFET in a 5mm x 6mm LFPAK package designed for compact and efficient designs. ... Delivers -30V drain-to-source ...
FDG6313N ; Technology. MOSFET (Metal Oxide) ; Configuration. 2 N-Channel (Dual) ; FET Feature. Logic Level Gate ; Drain to Source Voltage (Vdss). 25V.
Part #: FDG6313N. Download. File Size: 58Kbytes. Page: 5 Pages. Description: Dual N-Channel, Digital FET. Manufacturer: Fairchild Semiconductor.
Find the best pricing for onsemi FDG6313N by comparing bulk discounts from 14 distributors. Octopart is the world's source for FDG6313N availability, pricing,
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This ...
Rating
(1) · $0.11
FDG6313N Features* The pinouts are symmetrical; pin 1 and 4 are interchangeable.Units inside the carrier can be of either orientation and will not aff.
Features. ▫ 90% Peak Efficiency. ▫ Low EMI. ▫ Low Ripple. ▫ Selectable Output Voltage:1.2V/1.5V for FAN5631. ▫ Efficiency Optimizer Feature for FAN5632.
In stock
FDG6313N SC-70-6 MOSFET N-CH DUAL 25V SC70-6 ; FET Feature, Logic Level Gate ; Drain to Source Voltage (Vdss), 25V ; Current - Continuous Drain (Id) @ 25 C · 500mA.
$0.11
FDG6313N - 25V Dual N-Channel, Digital FET 500 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET From old datasheet system ; File Size, 56.50K / 5 Page.
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.