FDG330P onsemi | Discrete Semiconductor Products - DigiKey
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FDG330P ; Input Capacitance (Ciss) (Max) @ Vds. 477 pF @ 6 V ; FET Feature. - ; Power Dissipation (Max). 750mW (Ta) ; Operating Temperature. -55°C ~ 150°C (TJ).
This P-Channel 1.8V specified MOSFET uses ON Semiconductor's advanced low voltage PowerTrench process. It has been optimized for battery power management ...
FDG330P. 7''. 8mm. 3000 units. FDG330P. Page 2. FDG330P Rev D (W). Electrical Characteristics. TA = 25°C unless otherwise noted. Symbol. Parameter. Test ...
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FDG330P ; Gate Charge (Qg) (Max) @ Vgs. 7 nC @ 4.5 V ; Vgs (Max). ±8V ; Input Capacitance (Ciss) (Max) @ Vds. 477 pF @ 6 V ; FET Feature. - ; Power Dissipation (Max).
FDG330P Rev D (W). FDG330P. P-Channel 1.8V Specified PowerTrench MOSFET. General Description. This P-Channel 1.8V specified MOSFET uses. Fairchild's advanced ...
In stock
Buy FDG330P with extended same day shipping times. View datasheets, stock ... onsemi-FDG330P MOSFETs Trans MOSFET P-CH 12V 2A 6-Pin SC- Video Transcript.
$2,668.72
Item Number. 181742787460 ; Model. MOSFET P-Ch PowerTrench ; MPN. FDG330P, ; Accurate description. 4.9 ; Reasonable shipping cost. 4.8.
FDG330P Product details ... This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery ...
P-Channel 1.8V Specified PowerTrench® MOSFET -12 V, -2 A, 110 mΩ. MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-12V; ...
FDG330P P-channel 1.8V Specified Powertrench MOSFET . This P-Channel 1.8V specified MOSFET uses Fairchilds advanced low voltage PowerTrench process.