Search Results
FDD6690A Rev. 2.1 Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) E AS Drain-Source Avalanche Energy Single Pulse, V DD = 15 V, I D= 12A 180 mJ I AS Drain-Source Avalanche Current 12 A Off Characteristics BV DSS Drain–Source Breakdown ...
Order today, ships today. FDD6690A – N-Channel 30 V 12A (Ta), 46A (Tc) 3.3W (Ta), 56W (Tc) Surface Mount TO-252AA from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- onsemi
- PowerTrench®
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Overview. This N-Channel Logic level MOSFET is produced using an advanced PowerTrench ® process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Waiting. Product Overview.
General Description. This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
FDD6690A onsemi / Fairchild MOSFET 30V N-Ch PowerTrench datasheet, inventory & pricing.
- onsemi
- Si
- MOSFET
FDD6690A N-Channel PowerTrench® MOSFET, 30V, 46A, 12mΩ Product Overview For complete documentation, see the data sheet. This N-Channel Logic level MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance ...
FDD6690A Product details General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
