FDD306P. FDD306P. 13''. 16mm. 2500 units. G. S. D. TO-252. S. G. D. March 2015. Page 3. 2 www.fairchildsemi.com. FDD306P Rev. 2.2. FDD306P P-Channel 1.8V ...
This P-Channel 1.8V Specified MOSFET uses a advanced low voltage PowerTrench process. It has been optimized for battery power management. Waiting.
FDD306P onsemi | Discrete Semiconductor Products - DigiKey
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In stock
Order today, ships today. FDD306P – P-Channel 12 V 6.7A (Ta) 52W (Ta) Surface Mount TO-252AA from onsemi. Pricing and Availability on millions of electronic ...
$0.42
This P-Channel 1.8V Specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management. Fairchild ...
$0.96
These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include ...
Symbol. Parameter. Ratings. Units. VDSS. Drain-Source Voltage. –12. V. VGSS. Gate-Source Voltage. ±8. V. ID. Drain Current. – Continuous. (Note 3). –6.7.
In stock
The FDD306P is a 1.8V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management. Fast ...
EGP 102.11
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse ...
SGD 1.39
The FDD306P is a 1.8V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management. Fast ...
Out of stock
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