DN2530N8-G Microchip Technology | Discrete Semiconductor Products
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DN2530N8-G ; Input Capacitance (Ciss) (Max) @ Vds. 300 pF @ 25 V ; FET Feature. Depletion Mode ; Power Dissipation (Max). 1.6W (Ta) ; Operating Temperature. -55°C ~ ...
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FEATURED PRODUCTS. MICROCHIP ... A 3300V, 400mΩ SiC MOSFET in a TO-247 4-lead package with a source sense. ... Offers a small footprint, high thermal conductivity, ...
The DN2530 is a low-threshold, depletion-mode, nor- mally-on transistor that utilizes an advanced vertical. DMOS structure and a well-proven silicon-gate ...
DN2530N8-G. RoHS Compliant View Datasheet. Lead Count: 3. Package Type: SOT-89. Temp Range: -55C to +150C. Packing Media: Tape and reel (2000). DN2530N8-G.
The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing ...
The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and. Supertex's well-proven silicon-gate ...
MICROCHIP TECHNOLOGY DN2530N8-G | Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3 - This product is available in Transfer Multisort Elektronik.
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DN2530N8-G. 3 SOT-89 T/RMOSFET, DEPLETION-MODE, 300V, 12 Ohm. Mfr. Part #: DN2530N8-G / RS Stock #: 70431582. Expand. Microchip Technology Inc. DN2530N8-G.
€0.90
The DN2530 is a low-threshold depletion-mode (normally-on) transistor utilising an advanced vertical DMOS structure and well-proven silicon-gate ...