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Part #: CM100DUS-12F. Download. File Size: 129Kbytes. Page: 2 Pages. Description: HIGH POWER SWITCHING USE. Manufacturer: Mitsubishi Electric Semiconductor.
Order today, ships today. CM100DUS-12F – IGBT Module Trench Half Bridge 600 V 100 A 350 W Chassis Mount Module from Powerex Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
Trench Gate Design. Dual IGBTMODTM. 100 Amperes/600 Volts. Description: Powerex IGBTMODTM Modules. are designed for use in high. frequency applications; 30 kHz. for hard switching applications. and 60 to 70 kHz for soft switching.
View CM100DUS-12F ~ by Powerex Inc. datasheet for technical specifications, dimensions and more at DigiKey.
CM100DU-12F Trench Gate Design Dual IGBTMOD™ 100 Amperes/600 Volts Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies – – 27 nf
Trench Gate Design Dual IGBTMOD 100 Amperes/600 Volts, CM100DUS-12F Datasheet, CM100DUS-12F circuit, CM100DUS-12F data sheet : POWEREX, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
CM100DU-12F Product details. Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.
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related to: CM100DUS-12FArriving in 3 days No condition refund in 7 days. Transport damage will be free reissue
Our product list have the millions of parts of hard-to-find sources. ARIAT provide (ICs) Semiconductors, IGBTs/FETs Modules, Memory, Diode and so on!
Buy CM100DUS-12F in YIC-Electronics.com. We will save your time and money!. Even hard-to-find parts from trusted sources are available to be shipped immediately.