Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...
BUK7606-55A,118 ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 55 V ; Current - Continuous Drain (Id) @ 25°C · 75A (Tc) ; Drive Voltage (Max ...
Specifications ; Mounting Style: SMD/SMT ; Package / Case: D2PAK-3 (TO-263-3) ; Vds - Drain-Source Breakdown Voltage: 55 V ; Packaging: Reel.
Feb 1, 2011 · In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol. Parameter. Conditions. Min. Max. Unit. VDS drain-source voltage.
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The BUK7606-55A, manufactured by NXP Semiconductors, is a high-performance PowerMOS transistor designed to cater to a wide range of applications requiring ...
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...
Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state ...
Download the BUK7606-55A,118 datasheet from Nexperia. Trans MOSFET N-CH 55V 154A Automotive 3-Pin(2+Tab) D2PAK T/R.
General description. Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
BUK7606-55B. 6.3. 75. 0.5. BUK7506-55A. BUK7606-55A. 7. 0.95. BUK6507-55C[1]. BUK6607-55C. BUK6207-55C. 7. 8.4. 75. 0.74. BUK9508-55B. BUK9E08-55B. BUK9608-55B.