BUK7511-55B,127 ; Input Capacitance (Ciss) (Max) @ Vds. 2604 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 157W (Tc) ; Operating Temperature. -55°C ~ 175°C ...
BUK7511-55B,127 ; Power Dissipation (Max). 157W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ) ; Mounting Type. Through Hole ; Supplier Device Package. TO-220AB.
BUK7511-55B,127 Nexperia $1.2814 - 55V 75A 157W 11mΩ@25A,10V 4V@1mA 1PCSNChannel TO-220AB MOSFETs ROHS datasheet, price, inventory C6869608.
BUK7511-55B,127 ; In-stock: 200 ; Transistor Polarity; N-Channel ; Drain Source Breakdown Voltage; 55 V ; Gate Source Breakdown Voltage; +/- 20 V ; Continuous Drain ...
Specifications ; Vds - Drain-Source Breakdown Voltage: 55 V ; Packaging: Tube ; Brand: Nexperia ; Product Type: MOSFET.
BUK7511-55B,127, N-channel TrenchMOS standard level FET TO-220 3-Pin, compliant obsolete. logo. Nexperia, BUK7511-55B,127, N-channel TrenchMOS standard level ...
$0.70
BUK7511-55A,127 ; Rds On - Drain-Source Resistance : 11 mOhms ; Technology : Si ; Transistor Polarity : N-Channel ; Vds - Drain-Source Breakdown Voltage : 55 V ; Vgs ...
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...
BUK7 Manufacturer ; Nexperia · BUK7511-55B,127 · Datasheet PDF Image, N-channel TrenchMOS standard level FET TO-220 3-Pin ; NXP Semiconductors, BUK7513-75B ...
Jun 17, 2010 · Ptot total power dissipation Tmb = 25 °C; see Figure 2. -. -. 166. W. Tstg storage temperature. -55. -. 175. °C. Tj junction temperature.