N channel enhancement mode. SYMBOL. PARAMETER. MAX. MAX. UNIT logic level field effect power transistor in a plastic envelope. BUK552. 100A. 100B.

SIEMENS BUK552-100B Through Hole Original Transistor New Lot Quantity-5 ; MPN. BUK552-100B ; Brand. SIEMENS ; Buy with CONFIDENCE. ; Everything we sell is MONEY ...

Part #, BUK552-100B. Download, BUK552-100B Click to download. File Size, 222.34 Kbytes. Page, 4 Pages. Manufacturer, NJSEMI [New Jersey Semi-Conductor ...

100. nA. RDS(ON). Drain-source on-state. VGS = 5 V;. BUK552-100A. -. 0.25. 0.28. Ω resistance. ID = 5.5 A. BUK552-100B. -. 0.3. 0.35. Ω. DYNAMIC CHARACTERISTICS.

GENERAL DESCRIPTION. N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in.

Part #: BUK552-100B. Download. File Size: 56Kbytes. Page: 7 Pages. Description: PowerMOS transistor Logic level FET. Manufacturer: NXP Semiconductors.

BUK552-100A/B Transistor MOSFET . N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use ...

BUK552-100B MOSFET. Datasheet pdf. Equivalent. Type Designator: BUK552-100B Type of Transistor: MOSFET Type of Control Channel: N ...

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The BUK552-100B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This ...