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BUK109-50GL Product details. DESCRIPTION. Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications. FEATURES. Vertical power DMOS output stage. Low on-state resistance.
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PowerMOS transistor BUK109-50GL Logic level TOPFET THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance Rth j-mb Junction to mounting base - - 1.3 1.67 K/W Rth j-a Junction to ambient minimum footprint FR4 PCB - 50 - K/W (see fig. 32) STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified
3 days ago · 1 Channel. Vds - Drain-Source Breakdown Voltage: 50 V. Id - Continuous Drain Current: 13.5 A. Rds On - Drain-Source Resistance: 125 mOhms. Minimum Operating Temperature: - 55 C.
- NXP
- Si
- MOSFET
View BUK109-50DL by NXP USA Inc. datasheet for technical specifications, dimensions and more at DigiKey.
BUK109-50GL MOSFET. Datasheet pdf. Equivalent. Type Designator: BUK109-50GL. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 75 W. Maximum Drain-Source Voltage |Vds|: 50 V. Maximum Drain Current |Id|: 13 A. Maximum Junction Temperature (Tj): 150 °C.
View Similar. Order today, ships today. BUK109-50DL,118 – Power Switch/Driver 1:1 N-Channel 26A D2PAK from NXP USA Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
Philips Semiconductors Product specification. PowerMOS transistor BUK109-50DL. Logic level TOPFET. DESCRIPTION QUICK REFERENCE DATA. Monolithic temperatur e andSYMBOLPARAMETERMAX.UNIT. overload protected lo gic level power. MOSFET in a 3 pin p lastic surfaceVDSContinuous drain sour ce voltage50V. mount envelope, inte D curre.