ABSOLUTE MAXIMUM RATINGS. PARAMETER. SYMBOL. VALUE. UNIT. Drain-Source Voltage. VDS. 100. V. Drain-Gate Voltage. VDGR.
These N−Channel enhancement mode field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology.
In stock
BSS123 onsemi / Fairchild MOSFET SOT-23 N-CH LOGIC datasheet, inventory, & pricing.
$0.04
This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize ...
Low Gate Threshold Voltage. •. Low Input Capacitance. •. Fast Switching Speed. •. Low Input/Output Leakage. •. High Drain-Source Voltage Rating.
Features and benefits · Trench MOSFET technology · Extremely fast switching · Logic level compatible · Subminiature surface mounting. Applications. High-speed ...
People also ask
What is BSS123?
What is the logic level of BSS123?
$0.35 In stock
Order today, ships today. BSS123 – N-Channel 100 V 200mA 350mW (Ta) Surface Mount SOT-23-3 from onsemi. Pricing and Availability on millions of electronic ...
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products.
BSS123A Datasheet(PDF) - Zetex Semiconductors - Alldatasheet.com
www.alldatasheet.com › datasheet-pdf
Part #: BSS123A. Download. File Size: 45Kbytes. Page: 1 Pages. Description: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET.
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN.