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2 days ago · BSS123-7-F Diodes Incorporated MOSFET 100V 360mW datasheet, inventory, & pricing.
- Diodes Incorporated
- MOSFET
- Diodes Incorporated
- Si
BSS123-7-F – N-Channel 100 V 170mA (Ta) 300mW (Ta) Surface Mount SOT-23-3 from Diodes Incorporated. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
TypeDescriptionCategoryDiscrete Semiconductor Products ...MfrPackagingTape & Reel (TR) Cut Tape (CT) ...Part StatusActive- $0.29
- Diodes Incorporated
Product Summary. Description and Applications. These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance.
- 523KB
- 7
BSS123-7-F Diodes Incorporated MOSFET 100V 360mW datasheet, inventory & pricing.
- Diodes Incorporated
- MOSFET
- Diodes Incorporated
- Si
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- 408KB
- 5
Thanks to Diodes Zetex, both your amplification and switching needs can be taken care of with one component: the BSS123-7-F power MOSFET. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery.
Part #: BSS123-7-F. Download. File Size: 367Kbytes. Page: 4 Pages. Description: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR. Manufacturer: Diodes Incorporated.