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DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications.
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BFY90 PBFREE ; Voltage - Collector Emitter Breakdown (Max). 15V ; Frequency - Transition. 1.4GHz ; Noise Figure (dB Typ @ f). 5.5dB @ 800MHz ; Gain. 23dB ; Power - ...
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BFY90 TIN/LEAD Central Semiconductor RF Bipolar Transistors NPN RF 30Vcbo 30Vcer 15Vceo 25mA datasheet, inventory, & pricing.
DESCRIPTION. The BFXS9 and BFY90 are silicon planar epitaxial. NPN transistors produced using interdigitated base emitter geometry.
BFY90. Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our website at WWW ...
They are particulary designed for use in wide band common-emitter linear amplifiers up to 1 GHz. They feature very high fT, low reverse capacitance, excellent ...
BFY90 Datasheet. Part #: BFY90. Datasheet: 96Kb/4P. Manufacturer: STMicroelectronics. Description: WIDE BAND VHF/UHF AMPLIFIER. 13 Results.
Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) ...
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About item : BFY90, SILICON, NPN, GOLD-PLATED, TRANSISTOR. Type Designator: BFY90. Polarity: NPN. Material of Transistor: Si.