The on-chip controller allows power-supply voltages from 2.3V to 3.4V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike ...
BFY183(ES). Features. • For low noise, high-gain broadband amplifiers at collector ... BFY183(P)1. Not for flight use1. 1 (P) parts have the same fit, form and ...
Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA
BFY183P Datasheet pdf - HiRel NPN Silicon RF Transistor - Infineon
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BFY183P datasheet. BFY183P manufactured by: Infineon, HiRel NPN Silicon RF Transistor Others with the same file for datasheet: BFY183, BFY183ES · BFY183P ...
Part #: BFY183. Download. File Size: 149Kbytes. Page: 4 Pages. Description: HiRel NPN Silicon RF Transistor. Manufacturer: Infineon Technologies AG.
BFY183P, HiRel NPN silicon RF transistor in 4-pin Micro-X1 package. Operational temperature range from -65°C to 200°C. Datasheet*). BFY183S, HiRel NPN silicon ...
BFY183 (ES) datasheet - HiRel Microwave Transistor ... - Digchip
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For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package; fT= 8 GHz; F = 2.3 dB at 2 GHz ...
Maximum Ratings. Parameter. Symbol Values. Unit. Collector-emitter voltage. VCEO. 12. V. Collector-emitter voltage, VBE=0.
Features: · HiRel Discrete and Microwave Semiconductor· For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA.
Summary of Features: HiRel Discrete and Microwave Semiconductor; For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA.