BFR193 · For low noise, high-gain amplifiers up to 2 GHz · For linear broadband amplifiers · fT = 8 GHz, NFmin = 1 dB at 900 MHz · Pb-free (RoHS compliant) ...
NPN Silicon RF Transistor. Preliminary data • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz
Apr 4, 2014 · BFR193. Low Noise Silicon Bipolar RF Transistor. • For low noise, high ... BFR193. Package SOT23. Page 6. 2014-04-04. 6. BFR193. Edition 2009-11- ...
Infineon BFR193 Series RF Bipolar Transistors are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for Infineon BFR193 Series ...
Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large-signal behaviour • Lead (Pb)-free component
View BFR193 by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.
Rating
(901)
The product is manufactured by Vishay Semiconductor Diodes Division and has the Win Source part number 235093-BFR193T-GS08. The product is categorized under ...
BFR193T Rf-bipolar NPN Type Transistors With Transition Frequency of 8 GHZ For low noise, high-gain amplifiers to 2 GHz For linear broadband amplifiers = 8 ...
Feb 14, 2000 · BFR193T Marking: RC. Plastic case (SOT 23). 1 = Collector, 2 = Base, 3 ... Dimensions of BFR193T in mm. 95 11346. Dimensions of BFR193TW in mm. 96 ...
Features. Collector-Emitter Volt (Vceo): 12V; Collector-Base Volt (Vcbo): 20V; Collector Current (Ic): 0.080A; hfe: 50-200 @ 30mA; Power Dissipation (Ptot): ...