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1. www.infineon.com › low-noise-rf-transistors › bfp740BFP740 - Infineon Technologies

   www.infineon.com › low-noise-rf-transistors › bfp740

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   The BFP740 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT). Summary of Features. Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA. High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA. OIP3 = 24.5 dBm @ 5.5 GHz, 3 V, 15 mA. Potential Applications. Wireless communications: WLAN, WiMax and UWB.

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3. www.infineon.com › dgdl › Infineon-BFP740-DS-v02_00BFP740 - Infineon Technologies

   www.infineon.com › dgdl › Infineon-BFP740-DS-v02_00

   Sep 26, 2018 · BFP740 SiGe:C NPN RF bipolar transistor Product description The BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list • Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA • High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA • OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mA Product validation

4. www.digikey.com › 70266/0/0 › 1BFP740 Datasheet by Infineon Technologies - Digi-Key Electronics

   www.digikey.com › 70266/0/0 › 1

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   The BFP740 is a wideband NPN RF he terojunction bipolar tr ansis tor (HB T). F eature lis t. • Low noise figur e NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA. • High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA. • OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mA. Produc t validation.

5. www.infineon.com › evaluation-boards › bfp740-boardBFP740 BOARD - Infineon Technologies

   www.infineon.com › evaluation-boards › bfp740-board

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   Overview. The BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. Summary of Features. • NFmin = 0.85 dB @ 5.5 GHz, 3 V, 6 mA • Maximum power gain G max = 19.5 dB @ 5.5 GHz, 3 V, 15 mA • Pb-free (RoHS compliant) and halogen-free standard ...

6. www.alldatasheet.com › 134680 › INFINEONBFP740 Datasheet(PDF) - Infineon Technologies AG

   www.alldatasheet.com › 134680 › INFINEON

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   Product Brief. The BFP740 is a linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 45 mA.

7. www.mouser.com › datasheet › 2Infineon SiGe WLAN LNA BFP740 Rev. 1 - Mouser Electronics

   www.mouser.com › datasheet › 2

   The BFP740 is a linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology.

8. www.mouser.com › ProductDetail › InfineonBFP 740 H6327 Infineon Technologies | Mouser

   www.mouser.com › ProductDetail › Infineon

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   May 24, 2024 · BFP 740 H6327 Infineon Technologies RF Bipolar Transistors RF BIP TRANSISTOR datasheet, inventory, & pricing.