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BFP 650 E6327 Infineon Technologies RF Bipolar Transistors GP BJT NPN 4V 0.15A NPN 4V 0.15A datasheet, inventory, & pricing.
BFP650E6327 from www.alldatasheet.com
NPN Silicon Germanium RF Transistor. Preliminary data • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB ...
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Specifications ; Transistor Type: Bipolar ; Technology: SiGe ; Operating Frequency: 37 GHz ; Collector- Emitter Voltage VCEO Max: 4 V.
The BFP650 is a high linearity wideband NPN bipolar RF transistor. The device is based on Infineon's reliable high volume silicon germanium carbon (SiGe:C) ...
Quick Details ; Mounting Type: standard ; Model Number: BFP650E6327 ; Application: standard ; Selling Units: Single item ; Single package size: 21X14X7 cm.
Port: Shenzhen or Hongkong ; Payment Terms: L/C,D/A,D/P,T/T,Western Union,MoneyGram,Paypal ; Supply Ability: 100000 pieces per Month Winsome ; Brand Name: Original.
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BFP650E6327 from www.aipcba.com
Nov 17, 2023 · BFP650E6327 Infineon datasheet PDF, 30 pages, view BFP650E6327 Specifications online, NPN Silicon Germanium RF Transistor.
The BFP650E6327 from INFINEON manufacturer is a RF Transistors (BJT) with NPN Silicon Germanium RF Transistor,Bipolar Transistors GP BJT NPN 4V 0.15A NPN 4V ...