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  1. BDX53B - BDX53C - BDX54B - BDX54C Electrical characteristics 3/7 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Note: For PNP types voltage and current values are negative. Table 3. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit VCEO(sus) (1) 1. Pulsed: pulse duration = 300 µs, duty cycle ...

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  2. www.onsemi.com › darlington-transistors › bdx54bBDX54B - onsemi

    The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices. Waiting. Product Overview. Features. High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc. Collector Emitter Sustaining Voltage @ 100 mAdc V CEO ...

  3. www.mouser.com › ProductDetail › onsemiBDX54B onsemi | Mouser

    BDX54B onsemi Darlington Transistors 8A 80V Bipolar datasheet, inventory, & pricing. Skip to Main Content (800) 346-6873. Contact Mouser (USA) (800) 346-6873 | Feedback.

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  4. EDA Symbols, Footprints and 3D Models. STMicroelectronics - BDX54B. Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain. Please select one model supplier :

  5. BDX54B Product details. Plastic Medium−Power. Complementary Silicon. Transistors. BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 65 WATTS. These devices are designed for general−purpose amplifier and low−speed switching applications.

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  6. Attribute. Description. Other Names. 497-5214-5. Standard Package. 50. Order today, ships today. BDX54B – Bipolar (BJT) Transistor PNP - Darlington 80 V 8 A 60 W Through Hole TO-220 from STMicroelectronics. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

  7. BDX54B SILICON PNP DARLINGTON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BDX54B is a silicon PNP Darlington power transistor designed for high gain amplifier applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V

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