BDX33B, 33C/34B, 34C. hFE. 750. −. −. Collector−Emitter Saturation Voltage. (IC = 3.0 Adc, IB = 6.0 mAdc). BDX33B, 33C/34B, 34C. VCE(sat). −. 2.5. Vdc. Base ...
BDX33B onsemi Darlington Transistors 10A 80V Bipolar datasheet, inventory, & pricing.
Order today, ships today. BDX33B – Bipolar (BJT) Transistor NPN - Darlington 80 V 10 A 70 W Through Hole TO-220 from onsemi. Pricing and Availability on ...
The BDX33B and BDX33C are silicon. Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in. Jedec TO-220 plastic package. They ...
The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and ...
Aug 1, 1993 · Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. RATING. SYMBOL. VALUE. UNIT. Collector-base voltage (IE = 0). BDX33.
Features. Collector-Emitter Volt (Vceo): 80V; Collector-Base Volt (Vcbo): 80V; Collector Current (Ic): 10A; hfe: 750 @ 3000mA; Power Dissipation (Ptot): 70W ...
BDX33B Transistor Datasheet pdf, BDX33B Equivalent. Parameters and Characteristics.
In stock
Description: NPN SILICON POWER DARLINGTON TRANSISTOR VCE0=80V; CI= 10A; Pd=70W; Part Number:BDX33B-40 Package:TO-220 Lead Free Status / Rohs Status: non ...
MULTICOMP PRO BDX33B Darlington Transistor, NPN, 3 Pins
il.farnell.com › ... › Darlington Transistors
$1,987.00
The BDX33B is a Darlington Transistor designed in monolithic construction with built-in base-emitter shunt resistor. -65 to 150°C Operating junction temperature ...