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  1. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960. BD953. DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=100V(Min) • DC Current Gain- : hFE= 40(Min)@ lc= 500mA • Complement to Type BD954 APPLICATIONS • Designed for power amplifier ...

  2. Silicon NPN Power Transistors, BD953 Datasheet, BD953 circuit, BD953 data sheet : SAVANTIC, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.

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  3. BD953: 88Kb / 3P: NPN PLASTIC POWER TRANSISTORS Savantic, Inc. BD953: 89Kb / 3P: Silicon NPN Power Transistors BD953: 90Kb / 3P: Silicon NPN Power Transistors New Jersey Semi-Conduct... BD953: 133Kb / 2P: Silicon NPN Power Transistor Rohm: BD9532EKN: 328Kb / 6P: Step down DC/DC converter Controller for NOTE PC

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  4. datasheet5.oss-cn-shanghai.aliyuncs.com › isc › BD953BD953

    iscSiliconNPNPowerTransistor BD953 ELECTRICALCHARACTERISTICS TC=25℃unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=1mA;IB=0 100 V V(BR)CBO Collector-BaseBreakdownVoltage IC=1mA;IE=0 100 V V(BR)EBO Emitter-BaseBreakdownVoltage IE=1mA;IC=0 5 V

  5. Silicon NPN Power Transistors BD953 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V

  6. BD953 Datasheet (HTML) - Continental Device India Limited: BD953 Product details: BD949, 951, 953, 955 NPN PLASTIC POWER TRANSISTORS BD950, 952, 954, 956 PNP PLASTIC ...

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