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Part #: BD646. Download. File Size: 125Kbytes. Page: 4 Pages. Description: NPN SILICON DARLINGTON TRANSISTORS. Manufacturer: Siemens Semiconductor Group.
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16 hours ago · BD646 Bourns Darlington Transistors 62.5W PNP Silicon datasheet, inventory, & pricing.
- Single
- Darlington Transistors
- Bourns
- PNP
BD646: 125Kb / 4P: NPN SILICON DARLINGTON TRANSISTORS BD646: 127Kb / 4P: PNP SILICON DARLINGTON TRANSISTORS Bourns Electronic Solut... BD646: 114Kb / 5P: PNP SILICON POWER DARLINGTONS Inchange Semiconductor ... BD646: 108Kb / 2P: isc Silicon PNP Darlington Power Transistor Savantic, Inc. BD646: 94Kb / 3P: Silicon PNP Power Transistors Comset ...
BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS 1 MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. Designed for Complementary Use with BD645, BD647, BD649 and BD651 62.5 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3 V, 3 A
Standard Package. 15,000. Order today, ships today. BD646-S – Bipolar (BJT) Transistor PNP - Darlington 60 V 8 A 2 W Through Hole TO-220 from Bourns Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- TRANS PNP DARL 60V 8A TO220
- Bourns Inc.
- BD646-S-ND
- BD646-S
PNP SILICON POWER DARLINGTONS, BD646 Datasheet, BD646 circuit, BD646 data sheet : BOURNS, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
Silicon PNP Power Transistors BD646/648/650/652 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD646 -60 BD648 -80 BD650 -100 V(BR)CEO Collector-emitter breakdown voltage BD652 IC=-30mA, IB=0 -120 V VCEsat-1 Collector-emitter saturation voltage IC=-3A ,IB=-12mA -2.0 V