Jun 1, 1973 · This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,. VBE(off) = ...
Pulsed duration = 300 ms, duty cycle ≥1.5%. Collector-emitter sustaining voltage. (IB = 0). IC =30mA for BD241A for ...
BD241A Transistor Datasheet pdf, BD241A Equivalent. Parameters and Characteristics.
The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors ... BD241A/B/C/BD242A/B/C. THERMAL DATA. Rthj-ca Thermal Resistance Junction-case.
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081. U.S.A.. COMPLEMENTARY SILICON PLASTIC. POWER TRANSISTORS ... designed for use in general purpose power ...
Description. The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance ...