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  1. Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor. General Description. The AO4918 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.

  2. AO4918 Product details. General Description. The AO4918 uses advanced trench technology to provide excellent RDS (ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost ...

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  3. AO4918: 151Kb / 8P: Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor Guangdong Kexin Industr... AO4918: 2Mb / 7P: Dual N-Channel MOSFET Alpha & Omega Semicondu... AO4918L: 151Kb / 8P: Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

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  4. AO4918 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor. The AO4918 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.

  5. AO4918 MOSFET. Datasheet pdf. Equivalent Type Designator: AO4918 Marking Code: 4918 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 2 W Maximum Drain-Source Voltage |Vds|: 30 V Maximum Gate-Source Voltage |Vgs|: 12 V Maximum Drain Current |Id|: 9.3 A Maximum Junction Temperature (Tj): 150 °C

  6. Find the best pricing for Alpha & Omega Semiconductor AO4918 by comparing bulk discounts from 2 distributors. Octopart is the world's source for AO4918 availability, pricing, and technical specs and other electronic parts.

  7. AO4918 and AO4918L are electrically identical. VDS (V) = , AO4918 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features Q1 The AO4918 uses advanced trench technology to provide excellent R DS(ON) and low gate , 3 IF 2.2 IFM 20 PD TJ, TSTG 2 1.28 -55 to 150 A W ° C AO4918