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1PCS AM1214-100 High Frequency Microwave Tube RF Power Amplifier ; Model. AM1214-100 ; Brand. Unbranded ; Accurate description. 4.9 ; Reasonable shipping cost. 5.0.
The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. □ REFRACTORY/GOLD METALLIZATION
POUT = 100 W MIN. WITH 6.0 dB GAIN. DESCRIPTION. The AM1214-100 device is a high power Class. C transistor specifically designed for L-Band Radar pulsed driver ...
AM1214-100 Transistor Datasheet pdf, AM1214-100 Equivalent. Parameters and Characteristics.
AM1214-100 L-band Radar Applications RF Microwave Transistors . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT ...
... OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT 100 W MIN. WITH 6.0 dB GAIN. DESCRIPTION The AM1214-100 device is a high power Class.
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Payment methods. Security guaranteed ; PackageNo ; TypeSoft Bag ; Model NumberTIM1011-4 FLM1213-6F TIM8596-4 FLM1011-4F AM1214-100 Z647 ; MaterialSilicone ...
This device is capable of operation over a wide. range of pulse widths, duty cycles, and tempera-. tures and is capable of withstanding 3:1 output.
AM1214-100: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 270 W IC Device Current* 13.5 A VCC Collector-Supply Voltage* 32 V TJ ...