40N60A Datasheet. Part #: HMG40N60A. Datasheet: 750Kb/5P. Manufacturer: Shenzhen Huazhimei Semiconductor Co., Ltd. Description: 40A, 600V insulated gate ...
The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well- ...
IXG(H,M)40N60/A Datasheet by IXYS ... MdMounting torque (M3) 1.13/10 Nm/lb.in. ... min. typ. max. ... IXYS reserves the right to change limits, test conditions, and ...
IXGH 40N60. IXGM 40N60. IXGH 40N60A IXGM 40N60A. TO-247 AD Outline. Symbol. Test Conditions. Characteristic Values. (TJ = 25°C, unless otherwise specified) min ...
Low Saturation Voltage using Trench with Field Stop Technology. • Low Switching Loss Reduces System Power Dissipation. • Soft Fast Reverse Recovery Diode.
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IXSH 40N60. IXSM 40N60. IXSH 40N60A IXSM 40N60A. TO-247 AD Outline. Symbol. Test Conditions. Characteristic Values. (TJ = 25°C, unless otherwise specified) min ...
The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor.
BHD 8.500
40N60 Transistor IGBT Chip, N-Chanel, 600V, 75A · 1.7V Low saturation voltage @ IC = 40A · 55ns Fall time @ TJ = 125°C · 625W Total power dissipation @ TC = 25° ...
Part Number, 40N60A. Manufacturer, IXYS Corporation (www.ixys.com). Note, Low Vce (sat) IGBT High Speed IGBT. Function, IGBTs (Insulated Gate Bipolar ...