IXSH 30N60U1. IXSH 30N60AU1. TO-247 AD (IXSH) Outline. Dim. Millimeter. Inches. Min. Max. Min. Max. A. 19.81 20.32 0.780 0.800. B. 20.80 21.46 0.819 0.845. C.

s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 120 microF ; Capacitance Tolerance: 75 (+/- %) ; WVDC: 100 volts ; Leakage ...

30N60U1. Category, Discrete => IGBTs (Insulated Gate Bipolar Transistors). Title, Low Voltage < 600 Volts. Description, Low Vce(sat) High Speed Igbt With Diode.

IXGH 30N60U1. IXGH 30N60AU1. Symbol. Test Conditions. Characteristic Values. (Tj = 25°C, unless otherwise specified) min. typ. max. 9fS ic = iC90; v ce = iov ...

IXSH 30N60U1. IXSH 30N60AU1. TO-247 AD (IXSH) Outline. Dim. Millimeter. Inches. Min. Max. Min. Max. A. 19.81 20.32 0.780 0.800. B. 20.80 21.46 0.819 0.845. C.

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Pages: 6, 82.72Kb. Download file, Adobe PDF · WinZIP archive. Preview, HTML priview. In this file. 30N60AU1, 30N60U1. ChipFind: search «30N60AU1» on Russian ...

IXSH 30N60U1 and IXSH 30N60AU1 data sheets. TO-204AE Outline. 1 = Gate. 2 = Collector. 3 = Emitter. Tab = Collector. 1 = Gate. 2 = Emitter. Case = Collector.

IXSH30N60U1, Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability, IXYS Corporation. 14, IXSH35N100A, High speed ...