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VS-30ETH06-M3 www.vishay.com Vishay Semiconductors Revision: 11-Jan-2022 3 Document Number: 96182 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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30ETH06 Vishay Semiconductors Rectifiers RECOMMENDED ALT VS-30ETH06-M3 datasheet, inventory, & pricing.
Hyperfast Rectifier, 30 A FRED Pt. D2PAK (TO-263AB) TO-262AA. Base cathode. N/C. Anode. N/C. Anode. FEATURES. Hyperfast recovery time. Low forward voltage drop. Low leakage current. 125 °C operating junction temperature. Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C. Material categorization: for definitions of compliance.
FEATURES. • Hyperfast recovery time. • Low forward voltage drop. • Low leakage current. • 175 °C operati ng junction temp erature. • Designed and q ualified for i ndustrial level. DESCRIPTION/APPLICATIONS. State of the ar t h yperfast reco very rectifiers designed with. optimized performance of forw ard v oltage drop, h yperfast.
View 30ETH06 by Vishay General Semiconductor - Diodes Division datasheet for technical specifications, dimensions and more at DigiKey.
VS-30ETH06-M3 PRODUCT INFORMATION. Hyperfast Rectifier, 30 A FRED Pt®. FEATURES. Reduced Qrr and soft recovery. 175 °C TJ maximum. For PFC CRM/CCM operation. APPLICATIONS. State of the art hyperfast recovery rectifiers designed with optimizedperformance of forward voltage drop, hyperfast recovery time and soft recovery.
30ETH06 Vishay High Power Products Hyperfast Rectifier, 30 A FRED PtTM DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time trr IF = 1.0 A, dIF/dt = 50 A/µs, VR = 30 V - 28 35 TJ = 25 °C ns IF = 30 A dIF/dt = 200 A/µs VR = 200 V-31-TJ = 125 °C ...
