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1. www.alldatasheet.com › 15063 › PHILIPS2N1613 Datasheet(PDF) - NXP Semiconductors

   www.alldatasheet.com › 15063 › PHILIPS

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   DESCRIPTION. NPN medium power transistor in a TO-39 metal package. FEATURES. • Low current (max. 500 mA) • Low voltage (max. 50 V). APPLICATIONS. • High-speed switching and amplification. Similar Part No. - 2N1613. More results. Similar Description - 2N1613. More results. About NXP Semiconductors.

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3. www.alldatasheet.com › 2N16132N1613 Datasheet(PDF) - STMicroelectronics

   www.alldatasheet.com › 2N1613

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   2N1613 Product details. The 2N1613 and2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.

4. www.mouser.com › datasheet › 2/68/2n1613-497632N1613 SILICON NPN TRANSISTOR DESCRIPTION: NPN epitaxial ...

   www.mouser.com › datasheet › 2/68/2n1613-49763

   DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER. (TA=25°C unless otherwise noted) Collector-Base Voltage. Collector-Emitter Voltage. Emitter-Base Voltage. Continuous Collector Current.

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5. alltransistors.com › transistor2N1613 Datasheet, Equivalent, Cross Reference Search

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   Transistor Catalog. 2N1613 Datasheet, Equivalent, Cross Reference Search. Type Designator: 2N1613. Material of Transistor: Si. Polarity: NPN. Maximum Collector Power Dissipation (Pc): 0.8 W. Maximum Collector-Base Voltage |Vcb|: 75 V. Maximum Collector-Emitter Voltage |Vce|: 50 V. Maximum Emitter-Base Voltage |Veb|: 7 V.

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6. www.mouser.com › datasheet › 2NPN LOW POWER SILICON TRANSISTOR - Mouser Electronics

   www.mouser.com › datasheet › 2

   2N1613, L P T 0.5 0.8 1.8 3.0 W Operating & Storage Junction Temperature Range T J, T stg -55 to +175 0C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction -to-Case 02N718A 2N1613, L R θJC 97 58 C/W 1) Derate linearly 4.57 mW/ 0C for 2N1613, L and 2.85 mW/ C for 2N718A for T A > +25 0C

7. www.digikey.in › 2N1613 › 76069082N1613 Microchip Technology | Discrete Semiconductor Products ...

   www.digikey.in › 2N1613 › 7606908

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   Bulk. Substitutes (1) Additional Resources. Order today, ships today. 2N1613 – Bipolar (BJT) Transistor NPN 30 V 500 mA 800 mW Through Hole TO-39 (TO-205AD) from Microchip Technology. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

8. media.digikey.com › pdf › Data SheetsSWITCHES AND UNIVERSAL AMPLIFIERS - Digi-Key

   media.digikey.com › pdf › Data Sheets

   The 2N1613 and2N1711are siliconplanar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use inhigh-performance amplifier, oscillator and switching circuits. The 2N1711is also used to advantage in amplifiers wherelow noiseis animportant factor. ABSOLUTE MAXIMUM RATINGS.