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2SK3062-ZJ Product details. SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE. DESCRIPTION. The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES. • Low on-state resistance. RDS (on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A) RDS (on)2= 12 mΩMAX. (VGS= 4.0 V, ID= 35 A) • Low Ciss: Ciss= 5200 pF TYP.
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The 2SK3062 is a Switching N-Channel Power Mosfet. Comparison. Applications. Documentation. All Types Application Note Datasheet. Type. Title. Date. Application Note. Attention of Handling Semiconductor Devices. PDF648 KB 日本語. Apr 16, 2021. Datasheet. 2SK3062 Data Sheet (D13101EJ2V0DS00) PDF239 KB. Apr 1, 2001. 2 items. Design & Development. Models
Dec 4, 2023 · Renesas Electronics's 2SK3062-ZJ is a trans mosfet n-ch 60v 70a 3-pin(2+tab) d2pak. in the fet transistors, mosfets category. Check part details, parametric & specs updated 04-DEC-2023 and download pdf datasheet from datasheets.com, a global distributor of electronics components.
The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A) •Low Ciss: Ciss = 5200 pF TYP. •Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
MOS FIELD EFFECT TRANSISTOR, 2SK3062-ZJ Datasheet, 2SK3062-ZJ circuit, 2SK3062-ZJ data sheet : RENESAS, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
Design & Development. Product Options. Support. Product Tree. featured_play_list Overview. The 2SK3062 is a Switching N-Channel Power Mosfet. Documentation. 2 items. developer_board Design & Development. ECAD Models. Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table.
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES. Low on-state resistance. RDS(on)1 = 8.5 mW MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mW MAX. (VGS = 4.0 V, ID = 35 A) Low Ciss: Ciss = 5200 pF TYP. Built-in gate protection diode. ORDERING INFORMATION.
+0.0063+ohm+10+pcs&oid=4&h=73&w=80&turl=https%3A%2F%2Ftse1.mm.bing.net%2Fth%3Fid%3DOIP.ySjzht6jZ_8jkdHbjL7oDQAAAA%26pid%3DApi&tt=%E6%A0%AA%E5%BC%8F%E4%BC%9A%E7%A4%BE%E8%8B%A5%E6%9D%BE%E9%80%9A%E5%95%86+%2F+2SK3062-Z7+60V%2F70A%2F100W%2FRDS(on)+0.0063+ohm+10+pcs&sigr=vqaRGKg6UhYY&sigit=TgpnxAQ6Flda&sigi=LmULXW9Dj346&sign=GB1b8cXHwYJy&sigt=GB1b8cXHwYJy "株式会社若松通商 / 2SK3062-Z7 60V/70A/100W/RDS(on) 0.0063 ohm 10 pcs")
