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Silicon N-Channel Power F-MOS FET, 2SK3023 Datasheet, 2SK3023 circuit, 2SK3023 data sheet : PANASONIC, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
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Power F-MOS FETs 2SK3023 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 7.3±0.1 1.8±0.1 ...
isc N-Channel MOSFET Transistor, 2SK3023 Datasheet, 2SK3023 circuit, 2SK3023 data sheet : ISC, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
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2sk3023.pdf Power F-MOS FETs2SK3023 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance6.50.12.30.1 No secondary breakdown 5.30.14.350.1 Low-voltage drive 0.50.1 High electrostatic breakdown voltage Applications Contactless relay1.00.1 Diving circuit for a ...
2SK3023, Datasheet, equivalent, pinout, replacement, pdf, complementary. Power F-MOS FETs 2SK3023 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage s Applications q Contactless relay q Diving circuit for a solenoid q ...
Features, Applications: G Avalanche energy capacity guaranteed G High-speed switching G Low ON-resistance G No secondary breakdown G Low-voltage drive G High electrostatic breakdown voltage
Datasheet. Description. Toshiba Semiconductor. 2SK302. 252Kb / 6P. N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS) 2SK302. 377Kb / 7P. FM Tuner, VHF RF Amplifier Applications.