2SK1822-01MR Features. High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S ...
Download Fuji Electric Corp. 2SK1822-01MR pdf datasheet file.
Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof.
2SK1822-01MR, 2SK1823, 2SK1823(-01R) datasheet.Selling leads from all over the world, Seekic is the world's biggest IC trading marketplace on the internet.
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2SK1822-01M. N-channel MOS-FET. FAP-IIIA Series. 60V. 0,07Ω 20A. 35W. > Features. > Outline Drawing. - High Current. - Low On-Resistance. - No Secondary ...
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s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.1000 ohms ; Package Type: TO-3, HALOGEN FREE, TO-3P, 3 PIN ; ...
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SURFACE MOUNT HIGH EFFICIENCY SILICON RECTIFIER Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position ...