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the 2SD887 is a silicon NPN transistor, Uce = 60V, Ic = 4A, applications: power transistor
- TO-220
- 2SC2316
2SD887 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SD887 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 40 W Maximum Collector-Base Voltage |Vcb|: 80 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 4 A Max. Operating Junction Temperature (Tj): 175 °C
the 2SD887 is a silicon NPN transistor, Uce = 60V, Ic = 4A, applications: power transistor
2SD887 NPN Transistor. The 2SD887 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD887 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter. The 2SD887 transistor symbol shows an arrow from the base into the emitter.
The device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772. Table 1. Device summary. Order code. Marking. Package. Packing.
- 106KB
- 8
the 2SD887 is a silicon NPN transistor, Uce = 60V, Ic = 4A, applications: power transistor. to the shop. @semicon-data.com: 2SD887 transistor datasheet: Page: 1.. 1065:
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