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Description. Other Names. 2156-2SD879. ONSONS2SD879. Standard Package. 2,219. Order today, ships today. 2SD879 – Bipolar (BJT) Transistor from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
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2SD879 Product details. · In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. · The charge time is approximately 1 second faster than that of germanium transistors. · Less power dissipation because of low Collector-to Emitter Voltage VCE (sat), permitting more flashes of light to be emitted.
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2sd879.pdf. UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES * In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.
Similar Description - 2SD879. Manufacturer. Part No. Datasheet. Description. Bellnix Co.,Ltd. PHV. 283Kb / 4P. High efficiency, ultra small size output adjustable high voltage power suppy High Efficiency/l type resonance PWM mwthod 5W high voltage DC-DC converter.
View and download the latest onsemi 2SD879 PDF Datasheet including technical specifications
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2SD879 Datasheet. Part #: 2SD879. Datasheet: 94Kb/4P. Manufacturer: Sanyo Semicon Device. Description: 1.5V, 3V Strobe Applications. 28 Results. Datasheet: 91Kb/3P.
2SD879 NPN Epitaxial Planar Silicon Transistor, 1,5C, 3V Strobe Application . Features. In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster than that of germanium transistors. Less power dissipation because of low Collector-toEmitter.
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