2SD1932. DESCRIPTION. ·Collector-Emitter Breakdown Voltage-. : V(BR)CEO= 80V(Min). ·High DC Current Gain-. : hFE= 1000(Min)@ (VCE= 3V, IC= 2A). APPLICATIONS.
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ ...
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ ...
DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A). APPLICATIONS
Size:210K inchange semiconductor 2sd1932.pdf · 2SD1932. isc Silicon NPN Darlington Power Transistor 2SD1932DESCRIPTIONCollector-Emitter Breakdown Voltage-: ...
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s: Capacitance: 6.2pF ; Voltage - Rated: 50V ; Tolerance: ±0.5pF ; Package / Case: Radial ; Temperature Coefficient: C0G, NP0 ; Packaging: Tape & Reel (TR) ; : ...
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the D1932 is a silicon NPN darlington transistor, Ucb = 80V, Ic = 4A, applications: audio frequency stage, power switch. Picture: -. Source: 2SD1932. Advanced ...
