2SC3788 Transistor Datasheet pdf, 2SC3788 Equivalent. Parameters and Characteristics.
2SC3788 Datasheet(PDF) - Sanyo Semicon Device - Alldatasheet.com
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High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency cahaceteristic : Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption ...
[2SA1478/2SC3788]. Features. · High breakdown voltage : VCEO≥200V. · Small ... * : The 2SA1478/2SC3788 are classified by 10mA hFE as follows: 08. C. 04. 021. D.
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s: : Polarized ; Capacitance Range: 32000 microF ; Capacitance Tolerance: 75 (+/- %) ; WVDC: 40 volts ; Leakage Current: 1697 microamps ; Mounting Style: ...
* : The 2SA1478 / 2SC3788 are classified by 10mA hFE as follws: Rank. C. D. E. F. hFE. 40 to 80. 60 to 120. 100 to 200. 160 to 320. TOKYO OFFICE Tokyo Bldg., 1- ...
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Description: 2SC3788 is a NPN silicon epitaxial transistor manufactured by Sanyo. Features: * Collector-Emitter Voltage: VCEO = -60V * Collector-Base ...
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This item can be returned in its original condition for a full refund or replacement within 30 days of receipt. You may receive a partial or no refund on used, ...
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Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high · frequency cahaceteristic · : Cre=1.2pF (NPN), 1.7pF (PNP).
