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2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATURE. Small collector to emitter saturation voltage. VCE (sat)=0.3V max(@Ic=100mA,IB=10mA). Excellent linearity of DC forward gain.
2SC3052 VCE=6V, IC=0.1mA VCE=6V,IC=10mA Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=100mA, IB=10mA µA Range Marking Rank Transition Frequency fT 180 MHz DC Current Gain hFE(2) 50 Emitter-Base Cutoff Current IEBO 0.1 V Collector-Emitter Saturation Voltage VCE(sat) 0.3 V hFE(1) 150 800 Collector-Base Cutoff Current ICBO Electrical ...
May 10, 2024 · 2SC3052-E-TP Micro Commercial Components (MCC) Bipolar Transistors - BJT NPN Plastic-Encapsulate Transistors datasheet, inventory, & pricing.
- Micro Commercial Components (MCC)
- 2SC3
- Bipolar Transistors-BJT
View 2SC3052 by Micro Commercial Co datasheet for technical specifications, dimensions and more at DigiKey.
Part #: 2SC3052. Datasheet: 220Kb/5P. Manufacturer: Isahaya Electronics Corporation. Description: LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE. 28 Results. Datasheet: 1MbKb/2P. Manufacturer: Shenzhen Luguang Electronic Technology Co., Ltd.
SOT-23. Excellent linearity of DC forward current gain. Low collector to emitter saturation voltage VCE(sat)=0.3V max. (@IC=100mA, IB=10mA) A. L. 3. Top View. C B. 3. CLASSIFICATION OF hFE. E. 2. Product-Rank. Range. Marking . 2SC3052-E. 150~300. LE. 2SC3052-F. 250~500. LF. 2SC3052-G. 400~800. LG. F. G. D. H. J. REF. Millimeter Min. Max. REF.
2SC3052 STM0440A: November 2022 [2.0] www.gmesemi.com 1 NPN Small Signal Surface Mount Transistor Features Low collector to emitter saturation voltage Excellent linearity of DC forward current gain
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