Ads · 2SB1492
Search Results
Silicon PNP epitaxial planar type Darlington. For power amplification. Complementary to 2SD2254. Features. Optimum for 60W HiFi output. High foward current transfer ratio hFE: 5000 to 30000. Low collector to emitter saturation voltage VCE (sat): < –2.5V. Similar Part No. - 2SB1492. More results. Similar Description - 2SB1492. More results.
- 2SB1492 Download
- 3 Pages
- 71.09 Kbytes
- 2SB1492
Size:57K panasonic. 2sb1492 2sd2254 2sd2254.pdf. Power Transistors2SD2254Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB149220.0 0.5 5.0 0.33.0FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE (sat):
DESCRIPTION. • High DC Current Gain- : hFE= 5000 (Min)@IC= -5A. • Low-Collector Saturation Voltage- : VCE (sat)= -2.5V (Max.)@IC= -5A. • Complement to Type 2SD2254. APPLICATIONS. • Designed for power amplifier applications. • Optimum for 60W HiFi output applications. Similar Part No. - 2SB1492. More results. Similar Description - 2SB1492.
Bulk. Manufacturers Standard Package. Order today, ships today. 2SA1492 – Bipolar (BJT) Transistor PNP 180 V 15 A 20MHz 130 W Through Hole TO-3P from Sanken Electric USA Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- Sanken Electric USA Inc.
2SB1492 DESCRIPTION • High DC Current Gain-: hFE= 5000(Min)@lc= -5A • Low-Collector Saturation Voltage-: VCE(sat)= -2.5V(Max.)@lc= -5A • Complement to Type 2SD2254 APPLICATIONS • Designed for power amplifier applications. • Optimum for 60W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VGEO VEBO Ic ICM PC Tj ...
DESCRIPTION. • High DC Current Gain- : hFE= 5000 (Min)@IC= -5A. • Low-Collector Saturation Voltage- : VCE (sat)= -2.5V (Max.)@IC= -5A. • Complement to Type 2SD2254. • 100% avalanche tested. • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS. • Designed for power amplifier applications.
iscSiliconPNPDarlingtonPowerTransistor 2SB1492 DESCRIPTION ·HighDCCurrentGain-:hFE=5000(Min)@IC=-5A ·Low-CollectorSaturationVoltage-:VCE(sat)=-2.5V(Max.)@IC=-5A ·ComplementtoType2SD2254 ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforpoweramplifierapplications ...
+Darlington+Transistor+2+pcs+...&oid=1&h=375&w=500&turl=https%3A%2F%2Ftse1.mm.bing.net%2Fth%3Fid%3DOIP.9h4r83jZ8Dt8FIjjHaShNQHaFj%26pid%3DApi&tt=2SB1492+%22Original%22+Panasonic+(Matsushita)+Darlington+Transistor+2+pcs+...&sigr=hqfYXKzf5Isd&sigit=wTZs6ftzPn7T&sigi=LvvwLitFOBGE&sign=.kJOnm2n8CcW&sigt=.kJOnm2n8CcW "2SB1492 \"Original\" Panasonic (Matsushita) Darlington Transistor 2 pcs ...")
+-+Panasonic+Semiconductor&oid=2&h=401&w=283&turl=https%3A%2F%2Ftse1.mm.bing.net%2Fth%3Fid%3DOIP.6-sspvgfAPrZSsOtmh9_ngDSEp%26pid%3DApi&tt=2SB1492+Datasheet(PDF)+-+Panasonic+Semiconductor&sigr=RmDrwzXcwHlG&sigit=rwAG_c7MmPNW&sigi=8HlgaR35EvZj&sign=8yEwAYdMtNU4&sigt=8yEwAYdMtNU4 "2SB1492 Datasheet(PDF) - Panasonic Semiconductor")
+-+New+Jersey+Semi-Conductor+Products%2C+Inc.&oid=5&h=367&w=283&turl=https%3A%2F%2Ftse1.mm.bing.net%2Fth%3Fid%3DOIP.XrJ5-xGBfOicKZxOYrzSRgAAAA%26pid%3DApi&tt=2SB1492+Datasheet(PDF)+-+New+Jersey+Semi-Conductor+Products%2C+Inc.&sigr=WEXRw4jJbF90&sigit=ESZa_LK6UAss&sigi=ziMs7..scmpa&sign=Ew7LpvqYsG11&sigt=Ew7LpvqYsG11 "2SB1492 Datasheet(PDF) - New Jersey Semi-Conductor Products, Inc.")
