$0.48
Order today, ships today. 2SA1222-T-AZ – Bipolar (BJT) Transistor PNP 160 V 500 mA 45MHz 1 W Through Hole from Renesas Electronics Corporation.
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS. FEATURES • Ideal for use of high withstanding voltage current such as TV
VCEO = 160 V: 2SA1222/2SC2959. ABSOLUTE MAXIMUM RATINGS (Ta = 25°C). Parameter. Symbol. Ratings. Unit. Collector to base voltage. VCBO. −160. V. Collector to ...
VCEO = 160 V: 2SA1222/2SC2959. ABSOLUTE MAXIMUM RATINGS (Ta = 25°C). Parameter. Symbol. Ratings. Unit. Collector to base voltage. VCBO. −160. V. Collector to ...
2SA1222 Datasheet, Equivalent, Cross Reference Search. Transistor ...
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2SA1222 Transistor Datasheet pdf, 2SA1222 Equivalent. Parameters and Characteristics.
DATA SHEET SILICON TRANSISTORS 2SA1221, 1222 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES Ideal for use of high withstanding ...
Bipolar Power Transistors. Download Datasheet · 2SA1221,2SA1222 Data Sheet. Jump to Page Section: Overview; Documentation; Design & Development; Product Options ...
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS Others with the same file for datasheet: 2SA1221 · 2SA1222 datasheet pdf NEC
Download the 2SA1222-T-AZ datasheet from Renesas. Transistor Gp Bjt PNP 160V 500MA.
$20.00
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