$0.20
2N7002F,215 ; Current - Continuous Drain (Id) @ 25°C · 475mA (Ta) ; Drive Voltage (Max Rds On, Min Rds On). 4.5V, 10V ; Rds On (Max) @ Id, Vgs. 2Ohm @ 500mA, 10V.
2N7002F,215 Nexperia MOSFET N-CH TRNCH 60V .475A datasheet, inventory, & pricing.
Apr 28, 2006 · N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using. TrenchMOS technology. 1.2 Features. 1.3 Applications. 1.4 ...
Features and benefits · Suitable for logic level gate drive sources · Very fast switching · Surface-mounted package · Trench MOSFET technology. Applications.
THERMAL CHARACTERISTICS Values are at TC = 25°C unless otherwise noted. Symbol. Parameter. Value. Unit. 2N7000. 2N7002. NDS7002A. RθJA. Thermal Resistance ...
Overview. This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize ...
$99,990.00
MOSFET, N CH, 60V, 475MA, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 475mA; Drain Source Voltage Vds: 60V; On Resistance ...
N-CHANNEL ENHANCEMENT MODE MOSFET. Product Summary. V(BR)DSS. RDS(ON) max. ID max ... 2N7002-13-F. Standard. SOT23. 10,000/Tape & Reel. 2N7002Q-7-F. Automotive.
In stock
2N7002,215 Nexperia MOSFET 2N7002/SOT23/TO-236AB datasheet, inventory, & pricing.
In stock
Pack of 10 2N7002F Mosfet N-Channel 60V 475MA TO236AB Surface Mount :RoHS, Cut Tape 2N7002F,215: Amazon.com: Industrial & Scientific.