PARAMETER. SYMBOL 2N6716. 2N6717. 2N6718. UNIT. Collector-Base Voltage. VCBO. 60. 80. 100. V. Collector-Emitter Voltage. VCEO.
The UTC 2N6718 is designed for general purpose medium power amplifier and ... 2N6718. 1. Date Code. L: Lead Free. G: Halogen Free. Page 2. 2N6718. NPN SILICON ...
Order today, ships today. 2N6718-AP – Bipolar (BJT) Transistor NPN 100 V 1 A 50MHz 625 mW Through Hole TO-92 from Micro Commercial Co.
Specifications ; Series: 2N6718 ; Brand: Diodes Incorporated ; DC Current Gain hFE Max: 80 at 50 mA, 1 V ; Height: 4.01 mm.
2N6718. *.Pulse test: Pulse Width≤300μs,Duty Cycle≤2.0%. VCB=10V, IE=0,f=1MHz. MHz. hFE(2). 50. 250. VCE=10V, IC=50mA. V. VCE=1V, IC=250mA. Emitter Cut-off ...
2N6718 Datasheet (PDF) ... Spec. No. : HT200701 HI-SINCERITY Issued Date : 2007.08.01 Revised Date : 2007.08.09 MICROELECTRONICS CORP. Page No. : 1/5 H2N6718T NPN ...
2N6718 Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch :: Part, Case and Package Specifications, Availability and ...
The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A ...
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2N6718 Semiconductors from NATIONAL SEMICONDUCTOR In Stock, Order Now! Same Day Shipping, 2-Year Warranty - , TRANSISSTOR, NPN POLARITY, GENERAL PURPOSE, ...