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COLLECTOR-EMITTER VOLTAGE, 2N6413 Datasheet, 2N6413 circuit, 2N6413 data sheet : NJSEMI, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
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Transistor Catalog. 2N6413 Datasheet, Equivalent, Cross Reference Search. Type Designator: 2N6413. Material of Transistor: Si. Polarity: NPN. Maximum Collector Power Dissipation (Pc): 15 W. Maximum Collector-Base Voltage |Vcb|: 80 V. Maximum Collector-Emitter Voltage |Vce|: 60 V. Maximum Emitter-Base Voltage |Veb|: 6 V.
2N6413 datasheet, 2N6413 pdf, 2N6413 data sheet, datasheet, data sheet, pdf, New Jersey Semiconductor, Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box
2N6413 Datasheet COLLECTOR-EMITTER VOLTAGE - New Jersey Semi-Conductor Products, Inc.
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6420 series devices are silicon PNP power transistors designed for high speed switching and high voltage amplifier. TO-66 CASE. MAXIMUM RATINGS: (TC=25°C)
CVE-2020-26413. An issue has been discovered in GitLab CE/EE affecting all versions starting from 13.4 before 13.6.2. Information disclosure via GraphQL results in user email being unexpectedly visible. Note: References are provided for the convenience of the reader to help distinguish between vulnerabilities.
Apr 13, 2021 · Description. Windows Installer Spoofing Vulnerability. Severity. CVSS Version 4.0. CVSS Version 3.x. CVSS Version 2.0. CVSS 4.0 Severity and Metrics: NIST: NVD. N/A. NVD assessment not yet provided. NVD Analysts use publicly available information to associate vector strings and CVSS scores.
